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Photoluminescence Intensity Enhancement of GaAs by Vapor-Deposited GaS: a Rational Approach to Surface Passivation

Published online by Cambridge University Press:  22 February 2011

Phillip P. Jenkins ,
Aloysius F. Hepp ,
Michael B. Power ,
Andrew R. Macinnes  and
Andrew R. Barrontt
Phillip P. Jenkins
Affiliation:
Sverdrup Technology, Inc., Lewis Research Center Group, 2001 Aerospace Parkway, Brook Park, OH 44142
Aloysius F. Hepp
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, MS 302–1, Cleveland, OH 44135.
Michael B. Power
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, MS 302–1, Cleveland, OH 44135. Department of Chemistry and Materials Research Laboratory, Harvard University, Cambridge, MA 02138.
Andrew R. Macinnes
Affiliation:
Department of Chemistry and Materials Research Laboratory, Harvard University, Cambridge, MA 02138. Gallia, Inc., 53 Beaver Rd., Weston, MA 02193
Andrew R. Barrontt
Affiliation:
Gallia, Inc., 53 Beaver Rd., Weston, MA 02193
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Abstract

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster [(t-Bu)GaS]4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 111
Copyright
Copyright © Materials Research Society 1993

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References

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