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Photoluminescence Investigation of Dislocation-Related Defects in High Purity Silicon

Published online by Cambridge University Press:  26 February 2011

A. T. Hunter  and
Kimberly L. Schumacher
A. T. Hunter
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
Kimberly L. Schumacher
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

We conducted a luminescence investigation of the D1-D4 luminescence lines (0.8 to 1.0 eV) in three samples of high-purity, float-zone silicon. We conclude that the D3 line is a transverse-optical-phonon replica of the D4 line. In the samples studied, all of the defects were formed in the bulk of the crystals by high temperature thermal stress. The free-exciton lifetimes are short, varying between ∼20 nsec at a dislocation density of 1 × 106 cm−2 to ∼200 nsec at a density of 7 × 104 cm−2. The D4 decay shows a small temperature dependence, and varies between samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 283
Copyright
Copyright © Materials Research Society 1987

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References

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