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Photoluminescence of Erbium in Amorphous Silicon: Structural Relaxation and Optical Doping

Published online by Cambridge University Press:  28 February 2011

J. S. Custer ,
E. Snoeks  and
A. Polman
J. S. Custer
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
E. Snoeks
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
A. Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
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Abstract

Photoluminescence of erbium in ion-implanted amorphous Si has been observed after annealing at 400°C. In addition, a broad band of luminescence attributed to intrinsic defects in amorphous Si is present. The background level steadily increases with increasing anneal temperature. The fluorescence lifetimes of either the Er or the background in all samples are ≤150μsec.

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