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Photoluminescence of MBE and MOCVD ZnTe Films on GaAs

Published online by Cambridge University Press:  26 February 2011

B. A. Wilson ,
Carl E. Bonner ,
R. D. Feldman ,
R. F. Austin ,
D. W. Kisker ,
J. J. Krajewski  and
P. M. Bridenbaugh
B. A. Wilson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Carl E. Bonner
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. D. Feldman
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07330
R. F. Austin
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07330
D. W. Kisker
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07330
J. J. Krajewski
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07330
P. M. Bridenbaugh
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07330
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Abstract

We present low-temperature photoluminescence (PL) spectra of MBE and MOCVD ZnTe layers deposited on (100) GaAs substrates under different growth conditions. Strong bands associated with Zn vacancies are observed in the MBE materials, while the MOCVD spectra are dominated by sharp impurity-related lines. Stress levels less than 0.1 kbar are determined for both the MBE and MOCVD layers. A study of the effects of the Zn:Te ratio in the MBE growth chamber reveals an optimal value of −2.2 for a growth temperature of 325°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 327
Copyright
Copyright © Materials Research Society 1988

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References

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