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Photoluminescence of Silicon Nanostructures Formed by Ion Beam Implantation

Published online by Cambridge University Press:  25 February 2011

D. A. Redman ,
D. M. Follstaedt ,
T. Guilinger  and
M. Kelly
D. A. Redman
Affiliation:
Sandia National Laboratories, Albuquerque, NM.
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM.
T. Guilinger
Affiliation:
Sandia National Laboratories, Albuquerque, NM.
M. Kelly
Affiliation:
Sandia National Laboratories, Albuquerque, NM.
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Abstract

A new method was used to fabricate nanometer-scale structures in Si for photoluminescence (PL) studies. He ions were implanted to form a dense subsurface layer of small cavities (1–8 nm diameters). The implanted specimens were either annealed in H or anodized with HF to evaluate the quantum confinement model for PL from porous Si. Incomplete passivation apparently prevented PL in the H-annealed specimens. Implantation combined with anodization produced a substantial blue shift relative to anodization alone, which is consistent with quantum confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 201
Copyright
Copyright © Materials Research Society 1993

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References

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