Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-29T23:44:01.474Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Study of Reproduction of Energy Levels in Cdte Films Grown by Pulsed Laser Evaporation and Epitaxy

Published online by Cambridge University Press:  01 January 1992

J. M. Wrobel ,
C. E. Moffitt  and
J. J. Dubowski
J. M. Wrobel
Affiliation:
University of Missouri -KC, Department of Physics, Kansas City, MO 64110, USA
C. E. Moffitt
Affiliation:
University of Missouri -KC, Department of Physics, Kansas City, MO 64110, USA
J. J. Dubowski
Affiliation:
National Research Council of Canada, Institute for Microstructural Sciences, Ottawa, Ont. KIA 0R6, Canada
Get access

Abstract

A comparison between the electronic energy structure of a target material and epitaxial films obtained from this material by pulsed laser evaporation and epitaxy is presented in the paper. Targets with various impurity concentrations were used in this experiment, and the epitaxial growth took place at various substrate temperatures. Studies of photoluminescence spectra included temperature and power dependencies of spectral features associated with the impurities. Properties of donor-acceptor pair recombination served for the analysis of the differences in the impurity concentration in the layers and the source material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 459
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dubowski, J. J., Chemtronics 3, 66 (1988).Google Scholar
2. Dubowski, J. J., Acta Physica Polonica A80 , 221 (1991).Google Scholar
3. Cheung, J.T. and Sankur, H., Critical Rev. Solid St. Mater. Sci. 15, 63 (1988).Google Scholar
4. Laser Ablation for Materials Synthesis, edited by Paine, C. and Bravman, J. C. (Mater. Res. Soc. Proc. 191, Pittsburgh, PA, 1990).Google Scholar
5. Wrobel, J. M. and Dubowski, J. J., in Semiconductor Interfaces and Microstructures. edited by Feng, Zhe Chuan, (World Scientific Publishing Co., Pte. Ltd., Singapore, 1992) pp. 216–237.Google Scholar
6. Dubowski, J. J., J. Crystal Growth 101, 208 (1990).Google Scholar
7. Dubowski, J. J., Williams, D. F., Wrobel, J. M., Sewell, P. B., LeGeyt, J., Halpin, C., and Todd, T., Can. J. Phys. 67, 343 (1988).Google Scholar
8. Imbush, G. F., in Luminescence Spectroscopy, edited by Lumb, M. D. (Academic Press, London, 1978) pp. 75–92.Google Scholar
9. Zanio, K., in Semiconductors and Semmetals volume 13 Cadmium Telluride, edited by Willardson, R. K. and Beer, A. C. (Academic Press, New York, 1978), pp. 100–102, 129–163.Google Scholar
10. Brodin, M. S., Vitrikhovskii, N. J., and Kipen, A. A., Ukr. Fiz. Zhu., 17, 540 (1972).Google Scholar
11. Barnes, C. E. and Zanio, K., J. Appl. Phys. 46, 3959 (1975).Google Scholar
12. Astles, M., Gordon, N., Bradley, D., Dean, P. J., Wright, D. R., and Blackmore, G., J. Electr. Mat. 13, 167 (1984).Google Scholar
13. Sugiyama, K., Thin Solid Films 115, 97 (1984).Google Scholar
14. Giles, N. C., Bicknell, R. N., Harper, R. L., Hwang, S., Harris, K. A., and Schetzina, J. F., J. Cryst. Growth 86, 348 (1988).Google Scholar
15. Neumnark, G. F., in Luminescence Science and Technology, edited by Struck, C. W. (Proc. Electrochemical Soc. 88–24, Pennington, NJ 1988) pp. 14–24.Google Scholar
16. Dubowski, J. J., Wrobel, J. M., Rolfe, S., Jackman, J. A., Mazur, J. H., and Noad, J., in Properties of II–VI Semiconductors: Bulk Crystals, Epitaxial Films, Ouantypeum Well Structures, and Dilute Magnetic Systems, edited by Bartoli, F. J. Jr., Schaake, H. F., and Schetzina, J. F. (Mater. Res. Soc. Proc. 161, Pittsburgh, PA, 1990) pp. 443–448.Google Scholar
17. Morris, D., Benson, E., and Dubowski, J. J., to be published.Google Scholar