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Photomodulation spectroscopy of thin Ge films formed by molecular beam epitaxy on Si (111)

Published online by Cambridge University Press:  10 February 2011

K. L. Stoke ,
P. Deelman ,
H. S. Kang ,
L. J. Schowalter  and
P. D. Persans
K. L. Stoke
Affiliation:
Department of Physics, Applied Physics, and Astronomy and Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, NY, 12180, U.S.A
P. Deelman
Affiliation:
Department of Physics, Applied Physics, and Astronomy and Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, NY, 12180, U.S.A
H. S. Kang
Affiliation:
Department of Physics, Applied Physics, and Astronomy and Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, NY, 12180, U.S.A
L. J. Schowalter
Affiliation:
Department of Physics, Applied Physics, and Astronomy and Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, NY, 12180, U.S.A
P. D. Persans
Affiliation:
Department of Physics, Applied Physics, and Astronomy and Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, NY, 12180, U.S.A
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Abstract

The photomodulated transmission spectrum of a single Ge layer grown at 500°C on the Si(1 11) surface by molecular beam epitaxy is reported. The nominal Ge layer thickness was 50 nm. The modulation spectrum of thicker layers is dominated by a threelobed structure centered 70–80 meV above the bulk direct band edge. This structure is ascribed to excitation-induced broadening of the lowest direct exciton.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 165
Copyright
Copyright © Materials Research Society 1996

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References

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