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Photonic Crystal Properties of SiON (n=1.56)

Published online by Cambridge University Press:  01 February 2011

Igor M.P. Aarts ,
Rob W. v.d. Heijden  and
Huub W.M. Salemink
Igor M.P. Aarts
Affiliation:
Eindhoven University of Technology, Centre of Nanomaterials and National Research School Fotonica, Dept of Applied Physics, Eindhoven, The Netherlands
Rob W. v.d. Heijden
Affiliation:
Eindhoven University of Technology, Centre of Nanomaterials and National Research School Fotonica, Dept of Applied Physics, Eindhoven, The Netherlands
Huub W.M. Salemink
Affiliation:
Eindhoven University of Technology, Centre of Nanomaterials and National Research School Fotonica, Dept of Applied Physics, Eindhoven, The Netherlands
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Abstract

We report for the first time the use of the relatively low index material SiON (n=1.56) for photonic crystal applications. With this system it is possible to enlarge the complete TE-band gap of a 2D-photonic crystal by properly designing the unit cell filling. This may be practically realised because of the larger dimensions of photonic crystals in low index materials, which allows less stringent etch conditions when compared to traditional InP based materials. The optimal distribution of the refractive index is found by placing the displacement field in high or in low dielectric material. The structure is defined by two figures of merit, the width of the band gap and the smallest feature size, which is the key factor in etching the structure. In addition, we suggest the use of a graded-index profile to reduce out of plane scattering. This graded index profile can be realised by controlling the nitrogen flow during deposition of the SiON layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , L6.10
Copyright
Copyright © Materials Research Society 2002

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