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The Physics of Plasma Deposition of Microcrystalline Silicon

Published online by Cambridge University Press:  28 February 2011

B. Drevillon ,
I. Solomon  and
M. Fang
B. Drevillon
Affiliation:
Laboratoire de Physique des Interfaces et Couches Minces (PICM), Ecole Polytechnique, 91128 Palaiseau CEDEX, France.
I. Solomon
Affiliation:
Laboratoire de Physique de la Matière Condensée (PMC), Ecole Polytechnique, 91128 Palaiseau CEDEX, France.
M. Fang
Affiliation:
Laboratoire de Physique de la Matière Condensée (PMC), Ecole Polytechnique, 91128 Palaiseau CEDEX, France.
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Abstract

The growth of microcrystalline silicon (μc-Si), deposited by a succession of silane and hydrogen plasmas, is investigated in situ by ellipsometry in the visible and near UV-range. It is found that the amorphous tissue is more affected by the hydrogen etching than the crystallites. The model of “selective etching” emerges from these measurements. Although this model is compatible with the “partial chemical equilibrium” of Vep̌ek, it is somewhat more general and explains the porous nature of the (μc-Si) as well as the many atomic layers deposition-etching sequences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 455
Copyright
Copyright © Materials Research Society 1993

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References

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