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Picosecond Dynamics of Photoexcitations in Amorphous Multilayer Structures

Published online by Cambridge University Press:  26 February 2011

H. T. Grahn ,
Z. Vardeny ,
H. J. Maris ,
J. Tauc  and
B. Abeles
H. T. Grahn
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
Z. Vardeny
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
H. J. Maris
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
J. Tauc
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
B. Abeles
Affiliation:
Exxon Research and Engineering Company, Annandale, NJ 08801
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Abstract

We report on measurements of ultrafast relaxation processes in transmission and reflection in amorphous multilayer structures consisting of a-Si:H, a-SiNx:H, a-SiOx:H, and a-Ge:H. The decays recorded in transmission in the a-Si:H/a-SiNx:H and a-Si:H/a-SiOx:H multilayers depend strongly on the silicon sublayer thickness and are interpreted in terms of carrier transport to and trapping at interfacial defects. In the a-Si:H/a-Ge:H multilayers we observe oscillations in reflectivity due to standing acoustic waves with a frequency that depends on the repeat distance of the multilayer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 265
Copyright
Copyright © Materials Research Society 1987

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References

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