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Picosecond Raman Studies of Electron-Phonon Interactions in the Wide Bandgap Semiconductor GaN

Published online by Cambridge University Press:  21 February 2011

K.T. Tsen ,
D.K. Ferry ,
A. Botchkarev ,
B. Sverdlov ,
A. Salvador  and
H. Morkoc
K.T. Tsen
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
D.K. Ferry
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287
A. Botchkarev
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
B. Sverdlov
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
A. Salvador
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
H. Morkoc
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
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Abstract

Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy ћω= 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Fröhlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 565
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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