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Picosecond Ultrasonics Studies of the Effect of Ion Implantation on InterfAcial Bonding Between a thin Film and a Substrate

Published online by Cambridge University Press:  10 February 2011

G. Tas ,
J. J. Loomis ,
H. J. Maris ,
A. A. Bailes III  and
L. E. Seiberling
G. Tas
Affiliation:
Department of Physics, Brown University, Providence, RI 02912
J. J. Loomis
Affiliation:
Department of Physics, Brown University, Providence, RI 02912
H. J. Maris
Affiliation:
Department of Physics, Brown University, Providence, RI 02912
A. A. Bailes III
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611
L. E. Seiberling
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611
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Abstract

We have used picosecond ultrasonics to study the effects of ion irradiation on the interfacial bonding between gold films and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The rate at which these vibrations damp out via sound transmission across the interface into the substrate gives a measure of the adhesion of the film to the substrate. The films were irradiated with 2.5 MeV helium ions with doses between 7×1014 and 8×1016 ions cm-2. The adhesion, as measured by the rate of acoustic damping, was found to be significantly improved by the ion irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 369
Copyright
Copyright © Materials Research Society 1998

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References

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