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Published online by Cambridge University Press: 01 February 2011
GaInN/GaN quantum wells (QWs) grown on different crystal facets have been investigated by field-dependent photoluminescence and electroluminescence experiments. Externally applied voltage changes the total field strength and direction of the electric fields inside the quantum wells, consisting of piezoelectric and built-in fields. Electroluminescence with increasing current results in a peak shift due to screening of the field by the injected carriers. By modeling the peak shifts of the photoluminescence (PL) and electroluminescence (EL) signals we found strong piezoelectric fields for a {0001} sample and nearly vanishing fields for a sample grown on the {1-101} plane of GaN.