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Plasma Assisted Low Temperature OMVPE of GaAs Utilizing Trimethylgallium and Trimethylarsenic Feedstock Gases

Published online by Cambridge University Press:  26 February 2011

B. G. Pihlstrom ,
L. R. Thompson ,
S. Asher  and
G. J. Collins
B. G. Pihlstrom
Affiliation:
Colorado State Universit, Dept. of Electrical Engineering, Fort Collins, Colorado 80523
L. R. Thompson
Affiliation:
Colorado State Universit, Dept. of Electrical Engineering, Fort Collins, Colorado 80523
S. Asher
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, Colorado 80401
G. J. Collins
Affiliation:
Colorado State Universit, Dept. of Electrical Engineering, Fort Collins, Colorado 80523
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Abstract

A spatially confined disk shaped hydrogen plasma is used for plasma assisted organometallic vapor phase epitaxy (PAOMVPE) of GaAs at substrate temperatures from 245–430°C. Feedstock gases, trimethylgallium (TMGa) and trimethylarsenic (TMAs), are introduced downstream from the disk shaped plasma in the near afterglow. Dissociation of the organometallics is dominated by VUV photons and metastable species energy transfer reactions rather than non-selective electron impact. At the temperatures employed no thermal CVD occurs. An Arrhenius plot of the growth rate shows a low activation of 3 Kcal/mole for surface mobility. The transitional temperature from amorphous to homoepitaxial growth (300°C) is determined via electron diffraction patterns from deposited films versus substrate temperature. Increases in the feedstock gas V-III ratio resulted in decreases in absolute carbon concentration in the deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 105
Copyright
Copyright © Materials Research Society 1991

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