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Plasma Deposition of a-Si:H

Published online by Cambridge University Press:  21 February 2011

John C. Knights
John C. Knights*
Affiliation:
Xerox Palo Alto Research Center, 33,33 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

There are four easily identified stages in the formation of a hydrogenated amorphous silicon film from an electrical discharge in silane. The first stage is the primary reaction between electrons and silane resulting in a mixture of ions and free radicals. The second stage is the transport of these species to the substrate surface accompanied in parallel by a multiplicity of secondary reactions e.g. ion-molecule, photon-molecule, etc. The third stage is the reaction or adsorption of these species with or onto the substrate surface and the fourth stage is the process by which these species or their reaction products incorporate into the growing film or are reemitted from the surface into the gas phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 371
Copyright
Copyright © Materials Research Society 1985

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