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Plasma Deposition of Tungsten

Published online by Cambridge University Press:  28 February 2011

K. E. Greenberg
K. E. Greenberg*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

Tungsten films were plasma-deposited using an abnormal glow discharge through a mixture of tungsten hexafluoride, hydrogen, and argon. The films adhered well to silicon, silicon dioxide, gallium arsenide, and aluminum substrates placed directly on the discharge cathode. Typical deposition rates were on the order of 160 Angstroms/minute with as-deposited film resistivities of 40 to 70 microohm-cm. The tungsten was analysed using a number of techniques including X-ray diffraction, scanning electron microscopy, and Auger spectroscopy, Low-resistivity (<10 microohm-cm) films that adhered well to silicon-dioxide were obtained with a two-step process utilizing plasma deposition and conventional chemical vapor deposition.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 773
Copyright
Copyright © Materials Research Society 1987

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