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Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride from Novel Organosilanes

Published online by Cambridge University Press:  15 February 2011

J. M. Grow ,
R. A. Levy ,
Y. Yu  and
K. T. Shih
J. M. Grow
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
R. A. Levy
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
Y. Yu
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
K. T. Shih
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
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Abstract

The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH3/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 344: Symposium I – Materials and Processes for Environmental Protection , 1994 , 241
Copyright
Copyright © Materials Research Society 1994

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