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Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Germanium Nitride Thin Films

Published online by Cambridge University Press:  15 February 2011

David M. Hoffman ,
Sri Prakash Rangarajan ,
Satish D. Athavale ,
Demetre J. Economou ,
Jia-Rui Liu ,
Zongshuang Zheng  and
Wei-Kan Chu
David M. Hoffman
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204
Sri Prakash Rangarajan
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204
Satish D. Athavale
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, TX 77204
Demetre J. Economou
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, TX 77204
Jia-Rui Liu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, TX 77204
Zongshuang Zheng
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, TX 77204
Wei-Kan Chu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, TX 77204
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Abstract

Amorphous germanium nitride thin films are prepared by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)germanium, Ge(NMe2)4, and an ammonia plasma at substrate temperatures as low as 190°C with growth rates >250 Å/min. N/Ge ratios in the films are 1.3 and the hydrogen contents are 13 atom %. The hydrogen is present primarily as N-H. The refractive indexes are close to the bulk value of 2.1, and the band gap, estimated from transmission spectra, is 4.8 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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