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Plasma Processing Reactor with Surface Magnetic Field Confinement

Published online by Cambridge University Press:  21 February 2011

T. D. Mantei ,
T. E. Wicker  and
D. Kazmierzak
T. D. Mantei
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
T. E. Wicker
Affiliation:
Tegal Corporation, 11 Digital Drive, Novato, California 94947
D. Kazmierzak
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
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Abstract

A plasma reactor has been developed for dry reactive plasma etching and thin semiconductor film deposition. The system combines a multipolar magnetic field layer [1] for charged-particle confinement, and independently controlled substrate biasing. A large volume of dense (1011 cm-3), uniform, quiescent plasma is produced at low working pressure ( 1 mTorr). Anisotropic profiles can be etched into silicon in an SF6-O2 plasma with vertical etch rates ∼l um/min. In a pure silane plasma, good quality polycrystalline silicon films can be deposited at rates 1 to 10 Å/sec., at substrate temperatures 50° to 300° C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 409
Copyright
Copyright © Materials Research Society 1985

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References

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