Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-15T06:50:32.507Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100)

Published online by Cambridge University Press:  21 February 2011

T. P. Schneider ,
J. Cho ,
Y.Y. Chen ,
D.D. Maher  and
R.R. Nemanich
T. P. Schneider
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
J. Cho
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
Y.Y. Chen
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
D.D. Maher
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
R.R. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
Get access

Abstract

Low temperature (50-400°C) and low pressure (10-300 mTorr) processing conditions for remote H-plasma cleaning of Si(100) substrates were investigated. After plasma exposure, ordered surfaces were obtained which displayed 2×1, 3×l and lxI LEED diffraction patterns. The surface phases following the H-plasma clean were dependent on temperature and pressure. The electronic states of the surfaces were explored with angle resolved uv-photoemission spectroscopy (ARUPS) and states due to Si-H bonding were identified. The atomic interactions at the surface were modeled in terms of several processes including Eley-Rideal abstraction, thermally activated desorption and a physisorbed weakly bound state. The kinetic model was able to describe the transitions observed in the processing results. Suitability of the cleaning process for low temperature epitaxy was demonstrated by low temperature MBE epi-growth on an H-terminated 2×1 surface. The initial oxide formation on the H-terminated surfaces were studied by ARUPS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 197
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schneider, T.P., Cho, J., Aldrich, D.A., Chen, Y.L., Maher, D., and Nemanich, R.J., Proc. 180th Ann. Mting. ECS, 92–12, 122 (1991).Google Scholar
2. Cho, Jaewon, Schneider, T.P., Weide, J. Vander, Jeon, Hyeongtag, and Nemanich, R.J., Appl. Phy. Lett. 59, 1995 (1991).CrossRefGoogle Scholar
3. Cho, J. and Nemanich, R.J., Phys. Rev. B (in press).Google Scholar
4. Cho, J., Schneider, T.P., and Nemanich, R.J., Mat. Res. Soc. Symp. Proc. vol. 259, (in press).Google Scholar
5. Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tasch, A., J. Vac. Sci. Technol. B 7, 621 (1989).CrossRefGoogle Scholar
6. Hsu, T., Anthony, B., Qian, R., Irby, J., Banerjee, S., and Tasch, A., Lin, S. and Marcus, H., Magee, C., J. Electron. Mater. 20, 279 (1990).CrossRefGoogle Scholar
7. Schneider, T.P., Cho, J., Weide, J. Van der, Wells, S.E., Lucovsky, G., Nemanich, R.J., Mantini, M.J., Rudder, R.A., and Markunas, R.J., Mat. Res. Soc. Symp. Proc. 204, 333 (1991).CrossRefGoogle Scholar
8. Yasuda, T., Ma, Y., Habermehl, S., Kim, S.S., Lucovsky, G., Schneider, T.P., Cho, J., and Nemanich, R.J., Mat. Res. Soc. Symp. Proc. 201, (1991).Google Scholar
9. Fenner, D.B.. Biegelsen, D.K., and Bringans, R.D., J. Appl. Phys. 66, 419 (1989).CrossRefGoogle Scholar
10. Chabal, Y.J., Higashi, G.S., and Raghavachari, K., Burrows, V.A., J. Vac. Sci. Technol. A 7, 2104(1989).CrossRefGoogle Scholar
11. Griffith, J.E., Kochanski, G.P., Kubby, J.A., and Wierenga, P.E., J. Vac. Sci. Technol. A 7, 1914 (1989).CrossRefGoogle Scholar
12. Ciraci, S. and Batra, I.P., Surf. Sci. 178, 80 (1986).CrossRefGoogle Scholar
13. Cheng, C.C. and Yates, J.T. Jr., Phys. Rev. B 43, 4041 (1991).CrossRefGoogle Scholar
14. Greenlief, C.M., Gates, S.M., and Holbert, P.A., J. Vac. Sci. Technol. A 7, 1845 (1989).CrossRefGoogle Scholar
15. Sinniah, K., Sherman, M.G., Lewis, L.B., Weinberg, W.H., Yates, J.T. Jr., and Janda, K.C., Phys. Rev. Lett. 62, 567 (1989).CrossRefGoogle Scholar
16. Gates, S.M., Kunz, R.R., and Greenlief, C.M., Surf. Sci. 207, 364 (1989).CrossRefGoogle Scholar
17. Goodyear, C.C. and Engel, A. von, Proc. Phys. Soc. 79, 732 (1962).CrossRefGoogle Scholar
18. Northrup, J.E., Phys. Rev B 44, 1419 (1991).CrossRefGoogle Scholar
19. DiStefano, T.H. and Eastman, D.E., Phys. Rev. Lett. 27, 1560 (1971).CrossRefGoogle Scholar
20. Hansson, G.V. and Uhrberg, R.I.G., Surf. Sci. Rep. 9, 197 (1988).CrossRefGoogle Scholar
21. Yasuda, T., Ma, Y., Habermehl, S. and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).CrossRefGoogle Scholar