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Plasma-Assisted Epitaxial Growth of ZnSe Films In Hydrogen Plasma

Published online by Cambridge University Press:  21 February 2011

S. Yamauchi  and
T. Hariu
S. Yamauchi
Affiliation:
Department of Electronic Engineering, Tohoku University Sendai 980, Japan
T. Hariu
Affiliation:
Department of Electronic Engineering, Tohoku University Sendai 980, Japan
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Abstract

Plasma-assisted epitaxy (PAE) was applied to the growth of ZnSe films on (100) GaAs for low temperature epitaxial growth in hydrogen plasma. High purity ZnSe films were successfully grown by the control of hydrogen gas flow rate and VI/II supply ratio. Hydrogen-chloride gas and nitrogen gas mixed in pure hydrogen gas plasma around 2% respectively resulted in the growth of highly conductive n-type layers (630Scm−1 ) and nitrogen-acceptor doped layers (N-acceptor level∼100meV), however, the control of VI/II supply ratio is also very important for the efficient N-acceptor doping. The plasma optical emission spectroscopy indicated that Se-N is composed by the reaction of -ion with SeH (or Se) in hydrogen and nitrogen mixed gas plasma with Se supply.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 147
Copyright
Copyright © Materials Research Society 1990

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References

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