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Pld Epitaxial Tin Contacts To 6H-Sic And Gan

Published online by Cambridge University Press:  10 February 2011

V. Talyansky ,
R. D. Vispute ,
S. N. Andronescu ,
A. A. Iliadis ,
K. A. Jones ,
S. Choopun ,
M. J. Dowries ,
R. P. Sharma ,
T. Venkatesan  and
Y. X. Li
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V. Talyansky
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
R. D. Vispute
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
S. N. Andronescu
Affiliation:
Department of Electrical Engineering, University of Maryland, College Park, MD 20742
A. A. Iliadis
Affiliation:
Department of Electrical Engineering, University of Maryland, College Park, MD 20742
K. A. Jones
Affiliation:
Army Research Laboratory, Adelphi, MD 20783
S. Choopun
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
M. J. Dowries
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
R. P. Sharma
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
Y. X. Li
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
L. G Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
M. C. Wood
Affiliation:
Army Research Laboratory, Adelphi, MD 20783
R. A. Lareau
Affiliation:
Army Research Laboratory, Adelphi, MD 20783
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Abstract

We have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600°C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1× 10−3 Ωcm2 and 7.9 ×10−5 Ωcm2, respectively. Structural and electrical characterization of TiN thin films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 235
Copyright
Copyright © Materials Research Society 1998

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References

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