Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-28T13:59:06.434Z Has data issue: false hasContentIssue false
  • English
  • Français

Polarization Reversal Anti-parallel to the Applied Electric Field Observed Using a Scanning Nonlinear Dielectric Microscopy

Published online by Cambridge University Press:  01 February 2011

Takeshi Morita  and
Yasuo Cho
Takeshi Morita
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai, Miyagi, 980–8577, Japan, tmorita@ieee.org
Yasuo Cho
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai, Miyagi, 980–8577, Japan, tmorita@ieee.org
Get access

Abstract

It is well known that spontaneous polarization of ferroelectric material is an intrinsic property applied for nonvolatile memory devices. Poling direction can be reversed in a nanometer size area using the conductive cantilever of a scanning probe microscope. In order to detect nanodots patterns, scanning nonlinear dielectric microscope (SNDM) is superior to piezore-sponse microscope in terms of resolution. In this paper, a real-time measuring method of a poling direction is proposed. Using this method, the domain reversal process was observed and an unexpected phenomenon was found, namely, that the poling directions were aligned antiparallel to the poling electric field. This antiparallel poling reversal took place when the film thickness was more than 350 nm in the case of lithium tantalate. At present, the reason and mechanism of the antiparallel poling reversal are uncertain, although it might be related to the concentrated electric field near the cantilever tip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C6.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. SNDMı Y. Cho. Integr. Ferroelectr. 50 (2002) 89.Google Scholar
2. Cho, Y., Kazuta, S. and Ito, H.. Appl. Phys. Lett. 79 (2001) 2955.Google Scholar
3. Matsuura, K., Cho, Y. and Odagawa, H.. Jpn. J. Appl. Phys. 40 (2001) 3534.Google Scholar
4. Hiranaga, Y., Fujimoto, K., Wagatsuma, Y., Cho, Y., Onoe, A., Terabe, K. and Kita-mura, K.. Proc. Mater. Res. Soc. Symp. 748 (2003) U5.5.1.Google Scholar
5. Cho, Y., Fujimoto, K., Hiranaga, Y., Wagatsuma, Y., Onoe, A., Terabe, K. and Kita-mura, K.. Appl. Phys. Lett. 81 (2002) 4401.Google Scholar
6. Cho, Y., Matsuura, K., Valanoor, N. and Ramesh, R.. Proc. 7th Int. Symp. Ferroic Domains and Mesoscopic Structures (ISFD7) (2002) B50P03 Google Scholar
7. Jona, F. and Shirane, G.: Ferroelectric Crystals (The Macmillan Company, New York, 1962) p. 46.Google Scholar
8. Abplanalp, Anti M., Fousek, J. and Gunter, P.. Phys. Rev. Lett. 86 (2001) 5799.Google Scholar