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Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

Published online by Cambridge University Press:  01 February 2011

Sachio Kitagawa ,
Kenichi kosaka ,
Tadayoshi Tuchiya ,
Akira Suzuki ,
Tsutomu Araki  and
Yasushi Nanishi
Sachio Kitagawa
Affiliation:
re004006@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, 1-1-1, Noji-Higashi, Kusatsu-shi, Shiga, 525-8577, Japan, +81-77-561-2884
Kenichi kosaka
Affiliation:
ro003994@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, Japan
Tadayoshi Tuchiya
Affiliation:
tsuchiya@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center
Akira Suzuki
Affiliation:
a-suzuki@se.ritsumei.ac.jp, Ritsumeikan University, Res. Org. of Sci & Eng., Japan
Tsutomu Araki
Affiliation:
tara@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, Japan
Yasushi Nanishi
Affiliation:
nanishi@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, Japan
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Abstract

Optical properties of tensile strained AlxGa1-xN films of AlxGa1-xN/GaN heterostructures grown on sapphire were investigated by using polarization-resolved photoluminescence spectroscopy. Emissions from AlxGa1-xN with polarization of E//c and E⊥c were obtained at different peak energies. The energy separation of these emissions with polarization was increased linearly with the increase in Al mole fraction of the strained AlxGa1-xN, indicating that the energy separation was due to biaxial strain in the tensile strained AlxGa1-xN.

Keywords

nitrideoptical propertiesstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-03
Copyright
Copyright © Materials Research Society 2006

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References

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