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Polysilicon Nanowires for chemical sensing applications

Published online by Cambridge University Press:  11 July 2012

E. Jacques ,
L. Ni ,
A. C. Salaün ,
R. Rogel  and
L. Pichon
E. Jacques
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
L. Ni
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
A. C. Salaün
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
R. Rogel
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
L. Pichon
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
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Abstract

Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location on the substrate. Grounded and suspended polycrystalline silicon nanowires with a curvature radius as low as 150nm are integrated into resistors and used as gas (ammonia) sensors. Results show potential use of these nanowires for charged chemical species detection with an increase of the sensitivity with the increase of SiNWs exchange surface with the environment.

Keywords

Sinanoscalesensor
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 133 - 138
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Goldberger, J., Hochbaum, A. I., Fan, R., Yang, P, Nanoletters 6(5), 973 (2006)CrossRefGoogle Scholar
Yang, C., Barrelet, C. J., Capasso, F., Lieber, C.M., Nanoletters 6(12), 2929 (2006)CrossRefGoogle Scholar
Cui, Y., Wei, Q., Park, H. K., Lieber, C. M., Science, 293(5533), 1289 (2001)CrossRefGoogle Scholar
Lechuga, L.M., Tamayo, J., Álvarez, M., Carrascosa, L.G., Yufera, A., Doldán, R., Peralías, E., Rueda, A., Plaza, J.A., Zinoviev, K., Domínguez, C, Zaballos, A., Moreno, M., Martínez-A, C., Wenn, D., Harris, N., Bringer, C., Bardinal, V., Camps, T., Vergnenègre, C., Fontaine, C., Diaz, V., Bernad, A., Sensors and Actuators B 118, 2 (2006)CrossRefGoogle Scholar
Li, Z., Chen, Y., Li, X., Kamins, T.I., Nauka, K., Williams, R. S., Nanoletters 4(2), 245 (2004)CrossRefGoogle Scholar
Liu, Y, Cui, T, J Nanosci. Nanotechnol 6(4), 1019 (2006)CrossRefGoogle Scholar
Cheyssac, P., Sacilotti, M., and Patriarche, G., J. Appl. Phys. 100, 044315 (2006)CrossRefGoogle Scholar
Yu, L.. P Roca i Cabarrocas, Physical Review B 81, 085323 (2010)Google Scholar
Michelakaki, I., Nassiopoulou, A. G., Stavrinidou, E., Breza, K., Frangis, N., Nanosc. Res. Lett. 6, 414 (2011)CrossRefGoogle Scholar
Xiang-Lei, H., Guilhem, L., Pier-Francesco, F., Emmanuel, D., Microelectr. Eng., 88(8), 2622 (2011)Google Scholar
Ionica, I., Montes, L., Ferraton, S., Zimmermann, J., Saminadayar, L., Bouchiat, V., Sol. St. Electr. 49, 1497 (2005)CrossRefGoogle Scholar
Pichon, L, Rogel, R, Demami, F, Semicond. Sci. Technol. 25, 065001 (2010)CrossRefGoogle Scholar
Yang, L. et al. , VLSI Symp. Tech. Dig, p196 (2004)Google Scholar
Chou, S.Y., Krauss, R., Renstrom, P. J., Science, 85, 272 (1996)Google Scholar
Talin, A., Hunter, L., Léonard, F., Rokad, B., Appl. Phys. Lett. 89, 153102 (2006)CrossRefGoogle Scholar
Demami, F., Pichon, L., Rogel, R., Salaun, A. C., Mat. Sc. Eng. 6 012014 (2009)Google Scholar
Talin, A. A., Hunter, L. L., Leonard, F., Rokad, B., Appl. Phys. Lett, 89, 153102 (2006)CrossRefGoogle Scholar
Yu, J.Y., Chung, S.W., Heath, J.R., Jour. of Phys. Chem. B 104, 11864 (2000)CrossRefGoogle Scholar
Shimizu, Y., Eg-ashira, M., MRS Bull, June, p 18 (1999)CrossRefGoogle Scholar