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Position Control of Nucleation in Solid-Phase Crystallization of a-Si/SiO2 by Ge Layer Insertion

Published online by Cambridge University Press:  01 February 2011

Taizoh Sadoh ,
Kei Nagatomo ,
Isao Tsunoda ,
Atsushi Kenjo  and
Masanobu Miyao
Taizoh Sadoh
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukuoka 812–8581, Japan
Kei Nagatomo
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukuoka 812–8581, Japan
Isao Tsunoda
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukuoka 812–8581, Japan
Atsushi Kenjo
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukuoka 812–8581, Japan
Masanobu Miyao
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukuoka 812–8581, Japan
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Abstract

The effects of Ge layer insertion on the solid-phase crystallization (SPC) of a-Si on SiO2 have been investigated. Three types of sample structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600°C. For the structure (a) with a thin (∼ 5 nm) Ge layer, Ge atoms completely diffused into a-Si, and SPC was not enhanced. On the other hand, for the structure (a) with Ge layers thicker than 10 nm, Ge atoms were localized at the initial position. Such a localization of Ge atoms was remarkable for the structures (b) and (c) even for samples with thin Ge layers. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the inserted Ge layers, and then propagated into a-Si. The Ge layer insertion can be employed for positioning of crystal nucleation in SPC of a-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.5
Copyright
Copyright © Materials Research Society 2004

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References

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