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Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE

Published online by Cambridge University Press:  01 February 2011

Taihei Yamaguchi ,
Tsutomu Araki ,
Hiroyuki Naoi  and
Yasushi Nanishi
Taihei Yamaguchi
Affiliation:
ro014011@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan, Kusatsu, 525-8577, Japan
Tsutomu Araki
Affiliation:
tara@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
Hiroyuki Naoi
Affiliation:
hinaoi@se.ritsumei.ac.jp, Ritsumeikan Univ., Center for Promotion of The 21st Century COE Program, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
Yasushi Nanishi
Affiliation:
nanishi@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Abstract

We report on the growth of self-aligned InN nano-dots on nano-patterned GaN templates by electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE). In the fabrication of the nano-dots, InN was grown on GaN templates with reticular patterns of holes, which were prepared by the focused ion beam (FIB) technique. The InN nano-dots were formed selectively at the holes, resulting in the reticular array of InN nano-dos. The size of InN dots was controlled by varying the hole-pitch and the growth temperature. Furthermore, the shape of InN dots improved by thermal annealing after the growth. We have succeeded in controlling the position and size of InN nano-dots on nano-patterned substrates. Typically, InN nano-dots with a diameter of 50 nm and a height of 10 nm were fabricated in 410°C growth.

Keywords

III-Vnanostructuremolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-40
Copyright
Copyright © Materials Research Society 2007

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References

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