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Positron Annihilation Lifetime Spectroscopy (Pals) Application in Metal Barrier Layer Integrity for Porous Low-K Materials

Published online by Cambridge University Press:  15 March 2011

Simon Lin ,
Jia-Ning Sun ,
David W. Gidley ,
Jeffrey T. Wetzel ,
K.A. Monnig ,
E. Todd Ryan ,
Simon Jang ,
Douglas Yu  and
M.S. Liang
Simon Lin
Affiliation:
International SEMATECH, Austin, TX Taiwan Semiconductor Manufacturing Co, HsinChu, TAIWAN, R.O.C.
Jia-Ning Sun
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI
David W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI
Jeffrey T. Wetzel
Affiliation:
International SEMATECH, Austin, TX
K.A. Monnig
Affiliation:
International SEMATECH, Austin, TX
E. Todd Ryan
Affiliation:
International SEMATECH, Austin, TX Advanced Micro Devices, Austin, TX
Simon Jang
Affiliation:
Taiwan Semiconductor Manufacturing Co, HsinChu, TAIWAN, R.O.C.
Douglas Yu
Affiliation:
Taiwan Semiconductor Manufacturing Co, HsinChu, TAIWAN, R.O.C.
M.S. Liang
Affiliation:
Taiwan Semiconductor Manufacturing Co, HsinChu, TAIWAN, R.O.C.
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Abstract

Positron Annihilation Lifetime Spectroscopy (PALS) (1, 2) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >= 200A) and large scale meso-porous low-k (>50∼200A) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25μmL/0.3μmS structures when using SEMATECH in-house PVD Ta 250A as barrier layer. For small scale meso-porous (>20∼50A) and micro-porous (<=20A) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50A, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=< 50A) will be preferential for dense low-k like trench sidewall to avoid metal barrier integrity due to coverage problems from sidewall pores.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A9.7
Copyright
Copyright © Materials Research Society 2002

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References

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