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Preparation of Boron Nitride Films by Rf Reactive Sputtering

Published online by Cambridge University Press:  21 February 2011

P. K. Banerjee ,
B. Chaterjee ,
J. S. Kim  and
S. S. Mitra
P. K. Banerjee
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
B. Chaterjee
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
J. S. Kim
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
S. S. Mitra
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
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Abstract

Boron nitride films were deposited by rf reactive sputtering. The composition of the film was determined by X-ray photo-electron spectroscopy(XPS). Optical properties of boron nitride were studied by IR spectroscopy. Resultant films showed optical characteristics similar to those of hexagonal boron nitride. The ratio of boron to nitrogen was varied from 3.11 to 1.45 by varying the amount of nitrogen. Resulting films have refractive index in the range of 2.05 – 3.21.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 273
Copyright
Copyright © Materials Research Society 1992

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References

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