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Preparation of Cross-Section Tem Specimens of Semiconductors Containing Tungsten Interconnects Using Chemical Mechanical Polishing and Chemically Assisted ion Beam Milling, and Use of Afm to Evaluate the Success of These Procedures

Published online by Cambridge University Press:  10 February 2011

Robert Jamison ,
John Mardinly ,
David Susnitzky ,
Jian Duan ,
Carmen Matos  and
Sharon Darknell
Robert Jamison
Affiliation:
Dept. of Materials Science, University of California, Berkeley, CA 94720
John Mardinly
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa lara, CA 95052-8119
David Susnitzky
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa lara, CA 95052-8119
Jian Duan
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa lara, CA 95052-8119
Carmen Matos
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa lara, CA 95052-8119
Sharon Darknell
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa lara, CA 95052-8119
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Abstract

TEM of semiconductors containing tungsten interconnects is hampered by the problem of tungsten being intrinsically opaque to the electron beam, and at the same time typically being much thicker than the rest of the specimen. This work describes a technique which can predictably and reproducibly thin tungsten to electron transparency using chemical mechanical polishing (CMP). Chemically-assisted ion beam etching (CAIBE) techniques were also investigated, but found to be of little benefit. The key to development and evaluation of these methods was the AFM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 480: Symposium Z – Specimen Preparation for Transmission Electron Microscopy…IV , 1997 , 201
Copyright
Copyright © Materials Research Society 1997

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