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Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3

Published online by Cambridge University Press:  01 February 2011

Tomonori Ikegami ,
Iwao Kawayama ,
Masayoshi Tonouchi ,
Yoshiro Yamashita  and
Hirokazu Tada
Tomonori Ikegami
Affiliation:
ikegami@molectronics.jp, Osaka University, materials physics, Machikaneyamamati,1-3, Toyonaka, N/A, Japan
Iwao Kawayama
Affiliation:
kawayama@ile.osaka-u.ac.jp, Osaka University, Suita, N/A, Japan
Masayoshi Tonouchi
Affiliation:
tonouchi@ile.osaka-u.ac.jp, Osaka University, Suita, N/A, Japan
Yoshiro Yamashita
Affiliation:
yoshiro@echem.titech.ac.jp, Tokyo Institutes of Technology, Yokohama, N/A, Japan
Hirokazu Tada
Affiliation:
tada@mp.es.osaka-u.ac.jp, Osaka University, Toyonaka, N/A, Japan
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Abstract

Spin injection and transport characteristics of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) have been studied utilizing lateral type spin-valve devices with half metal electrodes, LaA0.67Sr0.33MnO3 (LSMO). The LSMO electrodes with a spacing of 200 nm were prepared by electron-beam lithography and dry etching of the epitaxial films grown on MgO substrates. The devices showed clear spin-valve behaviors with a magneto-resistance (MR) ratio up to 29 % at 9.1K. It was found that the MR ratio depended on the crystallinity of organic films as well as on temperature and applied bias voltages

Keywords

spintronicorganicmagnetoresistance (transport)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1033: Symposium J – Spin-Injection and Spin-Transfer Devices , 2007 , 1033-J04-04
Copyright
Copyright © Materials Research Society 2008

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References

1. Naber, W. J. M., Faez, S., Wiel, W. G. van der, J. Phys. D: Appl. Phys. 40, R205–R228 (2007).10.1088/0022-3727/40/12/R01Google Scholar
2. Xiong, Z. H., Wu, D., Vardeny, Z. V., Shi, J., Nature 427, 821–824 (2004).10.1038/nature02325Google Scholar
3. Wang, F. J., Yang, C. G., Vardeny, Z. V., Phys. Rev. B 75, 245324 (2007).10.1103/PhysRevB.75.245324Google Scholar
4. Majumdar, S., Laiho, R., Laukkanen, P., Väyrynen, I. J., Majumdar, H. S., Österbacka, R., Appl. Phys. Lett. 89, 122114 (2006).10.1063/1.2356463Google Scholar
5. Xu, W., Szulczewski, G. J., Leclair, P., Navarrete, I., Schad, R., Miao, G., Guo, H., Gupta, A, Appl. Phys. Lett. 90, 072506 (2007).Google Scholar
6. Dediu, V., Murgia, M., Matacotta, F. C., Taliani, C., Barbanera, S., Solid State Commun. 122, 181–184 (2002).10.1016/S0038-1098(02)00090-XGoogle Scholar
7. Tukagoshi, K., Alphenaar, B. W., Ago, H., Nature 401, 572–574 (1999).10.1038/44108Google Scholar
8. Sahoo, S., Kontos, T., Schonenberger, C., Surgers, C., Appl. Phys. Lett. 86, 112109 (2005).10.1063/1.1882761Google Scholar
9. Hueso, L. E., Pruneda, J. M., Ferrari, V., Burnell, G., Valdes-Herrera, J. P., Simmons, B. D., Littlewood, P. B., Artacho, E., Fert, A., Mathur, N. D., Nature 445, 410–413 (2007).10.1038/nature05507Google Scholar
10. Tombros, N., Jozasa, C., Popinciuc, M., Jonkman, H. T., Wees, B. J. van, Nature 448, 571 (2007).10.1038/nature06037Google Scholar
11. Miwa, S., Shiraishi, M., Mizuguchi, M., Shinjo, T., Suzuki, Y., Jpn. J. Appl. Phys. 45, L717–719 (2006).10.1143/JJAP.45.L717Google Scholar
12. Sakai, S., Yakushiji, K., Mitani, S., Takanashi, K., Naramoto, H., Avramov, P. V., Narumi, K., Lavrentiev, V., Maeda, Y., Appl. Phys. Lett. 89, 113118 (2006).10.1063/1.2354035Google Scholar
13. Goyal, A., Rajeswari, M., Shreekala, R., Lofland, S. E., Bhagat, S. M., Boettcher, T., Kwon, C., Ramesh, R., Venkatesan, T., Appl. Phys. Lett. 71, 17 (1997).Google Scholar
14. Julliere, M., Phys. Lett. A 54, 225–226 (1975).10.1016/0375-9601(75)90174-7Google Scholar
15. Xie, S. J., Ahn, K. H., Smith, D. L., Bishop, A. R., Saxena, A. Google Scholar
16. Teresa, J. M. De, Barthelemy, A., Fert, A., Contour, J. P., Montaigne, F., Seneor, P., Science 286, 507 (1999).10.1126/science.286.5439.507Google Scholar
17. Fujiwara, E., Takada, M., Yamashita, Y., Tada, H., Jpn. J. Appl. Phys. 33, L82–L84 (2005).10.1143/JJAP.44.L82Google Scholar