Hostname: page-component-6bf8c574d5-w79xw Total loading time: 0 Render date: 2025-02-22T16:03:51.904Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Planar and Cross-Sectional Thin Specimens by Chemical Dimpling with Optically Controlled Terminator

Published online by Cambridge University Press:  16 February 2011

D. M. Hwang ,
L. Nazar  and
C. Y. Chen
D. M. Hwang
Affiliation:
Bellcore, Red Bank, New Jersey 07701-7040, USA
L. Nazar
Affiliation:
Bellcore, Red Bank, New Jersey 07701-7040, USA
C. Y. Chen
Affiliation:
Bellcore, Red Bank, New Jersey 07701-7040, USA
Get access

Abstract

We have modified a conventional dimpling machine to perform chemical polishing with a reactive etchant. The modified dimpler also detects specimen perforation in situ optically, and automatically stops the dimpling process by lifting the dimpler wheel and flooding the specimen with a rinse solution. Using this apparatus, we are able to prepare both planar and cross-sectional thin specimens of compound semiconductor materials without using expensive and time-consuming ion-milling. The specimens have large thin areas, are free of artifacts, and are suitable for high-resolution lattice imaging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 309
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Marcus, R. B. and Sheng, T. T., Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (Wiley, New York, 1983).Google Scholar
2. Plummer, H. K. Jr., and Shinozaki, S. S., in Proc. 42nd EMSA Ann. Meeting, Ed. G. W. Bailey (San Francisco Press, San Francisco, 1984), p. 398.Google Scholar
3. Chew, N. G. and Cullis, A. G., Ultramicroscopy 23, 175 (1987).Google Scholar
4. Kelly, P. M. and Nutting, J., J. Iron Steel Inst. 192, 246 (1959).Google Scholar
5. Chu, S. N. G. and Sheng, T. T., J. Electrochem. Soc. 131, 2663 (1984).Google Scholar
6. Gatan Inc., 6678 Owens Drive, Pleasonton, CA 94588, USA.Google Scholar
7. Tamargo, M. C., Miguel, J. L. de, Turco, F. S., Skromme, B. J., Meynaidier, M. H., Nahory, R. F., Hwang, D. M., and Farrell, H. H., Proc. SPIE 1137, 73 (1989).Google Scholar