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Preparation of Sr0.7Bi2+xTa2O9 Thin Films on SiO2/Si at Low Temperature by Pulsed Laser Deposition and Fatigue-Tolerant C-V Characteristics with Large Memory Window

Published online by Cambridge University Press:  10 February 2011

Masanori Okuyama ,
Yoshinori Matsumuro ,
Hideki Sugiyama  and
Minoru Noda
Masanori Okuyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1- Machikaneyama-cho, Toyonaka, Osaka 560-851, JapanTel: +81-6-850-60, Fax: +81-6-850-641, e-mail: okuyama@ee.es.osaka-u.ac.jp
Yoshinori Matsumuro
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1- Machikaneyama-cho, Toyonaka, Osaka 560-851, Japan
Hideki Sugiyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1- Machikaneyama-cho, Toyonaka, Osaka 560-851, Japan
Minoru Noda
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1- Machikaneyama-cho, Toyonaka, Osaka 560-851, Japan
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Abstract

Preferentially (105)-oriented Sr0.7Bi2.8Ta2O9(SBTO) thin films on SiO2/n-Si(100) have been prepared by pulsed laser deposition at temperatures as low as 350°C, which is the lowest process temperature for growing SBTO ferroelectric thin films. Dielectric properties of the SBTO films have been improved by increasing the Sr/Bi atomic ratio from 0.7/2.8 to 0.7/2.0. Memory windows of as large as 3.6V and 4.V in the MFIS capacitor have been obtained at Sr/Bi ratios of 0.7/2.0 and 1.0/2.0 respectively and are the largest values reported in the MF(I)S diode structures. Little C-V degradation is observed up to with the 1010 cycles for the process temperature of 400°C, especially for Sr/Bi of 0.7/2.0, with the memory window remaining at more than 3.2V. Memory retention time was about 3×103 sec at which the difference in capacitance between “ON” and “OFF” states reduces to half of its initial value. Optimum hold bias voltage exists in the retention test. Improvement in memory characteristics is strongly related to the insulating properties of the ferroelectric and dielectric thin films rather than the value of dielectric constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 299
Copyright
Copyright © Materials Research Society 1999

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References

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