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Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

Published online by Cambridge University Press:  10 February 2011

M. S. H. Leung ,
R. Klockenbrink ,
C. Kisielowski ,
H. Fujii ,
J. Krüger ,
G. S. Sudhir ,
A. Anders ,
Z. Liliental-Weber ,
M. Rubin  and
E. R. Weber
M. S. H. Leung
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
R. Klockenbrink
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
C. Kisielowski
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
H. Fujii
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
J. Krüger
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
G. S. Sudhir
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
A. Anders
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
M. Rubin
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 µm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs though a minimum carrier concentration of ~ 1015 cm−3 was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 221
Copyright
Copyright © Materials Research Society 1997

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References

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