Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-15T07:15:51.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes

Published online by Cambridge University Press:  25 February 2011

Robin M. Dawson ,
J. H. Smith  and
C. R. Wronski
Robin M. Dawson
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA, 16802
J. H. Smith
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA, 16802
C. R. Wronski
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA, 16802
Get access

Abstract

Space charge limited currents of holes in intrinsic hydrogenated amorphous silicon (a-Si:H) have been obtained using novel p+-intrinsic-p+ (p-i-p) structures. The presence of these hole space charge limited currents is verified from their temperature dependence and their dependence on a wide range of intrinsic layer thickness. The carrier transport and space charge limited currents in the p-i-p structures are compared with those of n-i-n structures and the results are discussed in terms of a self consistent density of states in the gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 145
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

den Boer, W., de Physique, J., Colloq. C4, C4–451 (1981).Google Scholar
2. Pfleiderer, H., Kusian, W., and Kruhler, W., Solid State Comm. 49, 493 (1984).Google Scholar
3. Solomon, I., Benferhat, R., and Tran-Quoc, H., Phys. Rev. B 30, 3422 (1984).Google Scholar
4. Nakamura, N., Watanabe, K., Nishikuni, M.,. Hishikawa, Y., Tsuda, S., Nishiwaki, H., Ohnishi, M., and Kuwano, Y., J. of Non-Crystalline Solids 59 & 60, 1139 (1983).Google Scholar
5. Gildenblat, G., Nakagawa, S., Solid State Electronics 32, 717 (1989).Google Scholar
6. Kruhler, W., Pfleiderer, H., Plattner, R., Stetter, W. in Optical Effects in Amorphous Semiconductors, edited by Taylor, P.C. and Bishop, S.G., AIP Conference Proceedings No. 120 (American Institute of Physics, New York 1984), pp. 311–317.Google Scholar
7. Fortmann, C.M., O’Dowd, J., Newton, N., and Fischer, J., in Stability of Amorphous Alloy Materials and Devices, edited by Stafford, B.L. and Sabisky, E., AIP Conf. Proc. No. 157 (American Institute of Physics, New York, 1987), p. 103.Google Scholar
8. Labdi, A., de Rosny, G., Equer, B., J. of Non-Crystalline Solids 114, 399 (1989).Google Scholar
9. Wronski, C.R., Lee, S., Hicks, M., and Kumar, S., Phys. Rev. Lett. 63. 1420 (1989).Google Scholar
10. Lampert, M. and Mark, P., Current Injection in Solids. (Academic Press, New York, 1970), p. 80.Google Scholar
11. Murgatroyd, N., Thin Solid Films 17, 335 (1973).Google Scholar
12. McElheny, P.J., Arch, J.K., Lin, H.S. and Fonash, S.J., J. Appl. Phys. 64, 1254 (1988).Google Scholar