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Probing the Elementary Surface Reactions of Hydrogenated Silicon PECVD by In-situ ESR

Published online by Cambridge University Press:  09 August 2011

Satoshi Yamasaki ,
Claus Malten ,
Takehide Umeda ,
Jun-Ichi Isoya  and
Kazunobu Tanaka
Satoshi Yamasaki
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Claus Malten
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Takehide Umeda
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Jun-Ichi Isoya
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Kazunobu Tanaka
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
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Abstract

The dynamic change of the dangling bond (db) intensity in hydrogenated amorphous silicon (a-Si:H) during H2 and Ar plasma treatments was observed using an in-situ electron-spinresonance (ESR) technique. The experimental results show that the time to reach the steady state between gas-phase H atoms and the a-Si:H surface is less than 1 sec, and Ar plasma treatments create a top-surface region with an extremely high db density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 463
Copyright
Copyright © Materials Research Society 1999

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