Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-13T14:34:23.271Z Has data issue: false hasContentIssue false
  • English
  • Français

Process-dependent Coercive Fields in Undoped and Mn-doped BiFeO3 Films Formed on SrRuO3/Pt(111) Electrodes by rf Sputtering

Published online by Cambridge University Press:  31 January 2011

Jeong Hwan Kim ,
Hiroshi Funakubo ,
Yoshihiro Sugiyama  and
Hiroshi Ishiwara
Jeong Hwan Kim
Affiliation:
kim.j.af@m.titech.ac.jpqkrnsl@uos.ac.kr
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Tokyo Institute of Technology, Tokyo, Japan
Yoshihiro Sugiyama
Affiliation:
sugiyama.y@jp.fujitsu.com, Fujitsu Laboratories, Atsugi, Japan
Hiroshi Ishiwara
Affiliation:
ishiwara.h.aa@m.titech.ac.jp, Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Tokyo, Japan
Get access

Abstract

We deposited BiFeO3 (BFO) thin films on SrRuO3 (SRO)/Pt bottom electrodes by radio-frequency (RF) sputtering. Some samples were formed at the substrate temperature of 550 °C, and others were foremed at 450 °C and post-annealed at 650°C for crystallization. The coercive field in the post-annealed BFO film was smaller than that in the 550°C-deposited BFO film. The coercive field in Mn-doped BiFeO3 (BFMO) films which were deposited at 550 ˚C on SRO/Pt(111) was lower than that in undoped BFO films. Degradation of the remanent polarization was less significant in the post-annealed BFO film.

Keywords

ferroelectricelectrical propertiessputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F06-33
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science 299, 1719 (2003).Google Scholar
2 Yang, H., Jain, M., Suvorova, N. A., Zhou, H., Luo, H. M., Feldmann, D. M., Dowden, P. C., DePaula, R. F., Foltyn, S. R., and Jia, Q. X., Appl. Phys. Lett. 91, 072911 (2007).Google Scholar
3 Zheng, R. Y., Gao, X. S., Zhou, Z. H., and Wang, J., J. Appl. Phys. 101, 054104 (2007).Google Scholar
4 Ueno, R., Okaura, S., Funakubo, H., and Saito, K., Jpn. J. Appl. Phys. 44, L1231 (2005).Google Scholar
5 Singh, S. K., Ishiwara, H., and Maruyama, K., J. Appl. Phys. 100, 064102 (2006).Google Scholar
6 Kim, J.H., Funakubo, H., Ishiwara, H., Jpn. J. Appl. Phys. 48, 09KB02 (2009).Google Scholar
7 Singh, S. K., Ishiwara, H., and Maruyama, K., Appl. Phys. Lett. 88, 262908 (2006).Google Scholar