Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-14T17:45:15.382Z Has data issue: false hasContentIssue false
  • English
  • Français

Processing Temperature Dependence on Surface Morphology and Microstructure of Gold Films

Published online by Cambridge University Press:  15 February 2011

L. He ,
J. Siewenie  and
Z. Q. Shi
L. He
Affiliation:
Northern Illinois University, Department of Electrical Engineering, DeKalb, IL 60115
J. Siewenie
Affiliation:
Northern Illinois University, Department of Electrical Engineering, DeKalb, IL 60115
Z. Q. Shi
Affiliation:
Hughes STX Corp., Greenbelt, MD 20771
Get access

Abstract

Microstructure properties, and surface morphology of gold films processed at different temperature were investigated by transmission electron microscopy (TEM) and atomic force microscope (AFM). The film thickness was chosen less than several hundreds angstrong. Previous electrical measurement found that the low temperature (LT=77K) film showed several orders lower resistance compared to the film obtained at room temperature with very thin (about 100Å) thickness. This indicated potential application of these LT films on electronic and optoelectronic devices. TEM study found that the LT films showed much smaller density of grain boundaries than that of the room temperature (RT=300K) samples. In AFM observation, for film thickness of 100Å, LT film showed smoother, and continuous surface while the RT film consisted of discrete islands. When the thickness was increased to 200Å, the LT film showed much larger-sized grains compare to that of the RT film. For LT deposition, 2-dimensional larger-sized grains were first formed at low temperature deposition which later extended to be 3-dimension. The low grain boundary density of the LT film is consistent with its lower resistivity observation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 281
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tu, K. N., Mayer, J. W., and Feldman, L. C., Electronic Thin Film Science for Electrical Engineers and Material Scientists, Macmillan Publishing Company, New York (1992)Google Scholar
2. Maissel, L., and Glang, R., Handbook of Thin Film Technology, McGraw Hill (1983)Google Scholar
3. Liu, Q. Z., MacDonald, R. I., IEEE Transactions on Electronic Devices, 42, 1221 (1995)Google Scholar
4. Hurm, V., Rosenzweig, J., Ludwig, M., Benz, W., Berroth, M., Huelsmann, A., Kaufel, G., Koehler, K., Raynor, B. and Schneider, J., Electronics Lett., 27, 734 (1991)Google Scholar
5. Bhattachaya, P., Semiconductor Optoelectronic Devices, Printice Hall, Englewood Cliffs, New Jersey (1995)Google Scholar
6. Shi, Z. Q., Wallace, R. L. and Anderson, W. A., App. Phys. Lett., 59, 446 (1991)Google Scholar
7. Shi, Z. Q. and Anderson, W. A., J. Appl. Phys., 72, 3803 (1992)Google Scholar
8. He, L., Shi, Z. Q. and Anderson, W. A., J. Electron. Mat., 23, 1285 (1994)Google Scholar
9. He, L., and Shi, Z. Q, Proceeding of Mater. Res. Soc. Symposium, San Francisco, 1995 Google Scholar
10. Namba, Y., Jpn. J. Appl. Phys., 9, 1326 (1970)Google Scholar