Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-30T22:08:08.312Z Has data issue: false hasContentIssue false
  • English
  • Français

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

Sahar Sahhaf ,
Robin Degraeve ,
Mohammed Zahid  and
Guido Groeseneken
Sahar Sahhaf
Affiliation:
sahar.sahhaf@imec.be, Imec, Heverlee, Belgium
Robin Degraeve
Affiliation:
Robin.Degraeve@imec.be, Imec, Heverlee, Belgium
Mohammed Zahid
Affiliation:
Mohammed.Zahid@imec.be, Imec, Heverlee, Belgium
Guido Groeseneken
Affiliation:
Guido.Groeseneken@imec.be, Imec, Heverlee, Belgium
Get access

Abstract

In this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

Keywords

thermal stressesdefectsdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I05-08
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kaczer, B. Degraeve, R. Pangon, N. Groeseneken, G. “The Influence of Elevated Temperature on Degradation and Lifetime Prediction of Thin Silicon-Dioxide Films”, IEEE Trans. On Electron Dev., vol.47, no.7, pp.1514–1521, 2000.Google Scholar
2 Schram, T. Ragnarsson, L. Lujan, G. Deweerd, W. Chen, J. Tsai, W. Henson, K. Lander, R. Hooker, J., Vertommen, J. Meyer, C. De, Gendt, S. De, Heyns, M. “Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors”, Microelectronics reliability, vol. 45, pp.779–782, 2005.Google Scholar
3 Meuris, M. Mertens, P.W. Opdebeeck, A. Schmidt, H.F. Depas, M. Vereecke, G. Heyns, M. M. and Philipossian, A. “The IMEC clean: A new concept for particle and metal removal on si surfaces”, Solid State Technology, vol. 387, pp. 109–113, 1995.Google Scholar
4 O'Connor, R., Pantisano, L. Degraeve, R. Kauerauf, T. Kaczer, B. Roussel, Ph. J. Groeseneken, G., “SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection”, Proceedings IRPS, pp.324–329, 2008.Google Scholar
5 Degraeve, R. Cho, M. Govoreanu, B. Kaczer, B. Zahid, M.B. Houdt, J. Van, Jurcak, M. and Groeseneken, G., “Trap Spectroscopy by Charge Injection and Sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacks”,Technical Digest International Electron Devices Meeting - IEDM, pp. 775–778, 2008.Google Scholar
6 Sahhaf, S. Degraeve, R. Cho, M. Brabanter, K. De, Roussel, Ph.J. Zahid, M.B. Groeseneken, G., “Detailed Analysis of Charge Pumping and IdVg Hysteresis for Profiling Traps in SiO2/HfSiO(N)”, submitted to Microelectronic engineering.Google Scholar