Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-22T16:48:03.713Z Has data issue: false hasContentIssue false
  • English
  • Français

Progress in Understanding the Optical Properties of EL2

Published online by Cambridge University Press:  25 February 2011

G. A. Baraff
G. A. Baraff*
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J., 07974
Get access

Abstract

The material covered in the talk given under this title has already been published [1] or has been accepted for publication [2]. For this reason, the material to be presented below will consist only of a summary with references.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 805
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Baraff, G. A., Phys. Rev. B40, 1030, 1989 Google Scholar
2 Baraff, G. A., Phys. Rev. B41, 1990, (to be published)Google Scholar
3 a) Kaminska, M., Skowronski, W. and Kuszko, W., Phys Rev. Lett., 55 2204 (1985); b) M. Kaminska in Proc. 17th Int. Conf. on Phys. of Semiconductors, San Francisco (1984), Edited by D. J. Chadi and W. Harrison, Springer, New York, (1985) p.74l; c) J. Dabrowski and M. SchefΠer, Phys. Rev. Lett. 60, 2183, (1988); d) D.J. Chadi and K.J. Chang, Phys. Rev. Lett. 60, 2187, (1988); e) H.J. von Bardeleben, D. Stίevenard, D. Desresmes, A. Huber and J.C. Bourgoin, Phys. Rev. B34, 7192 (1986); f) B.K. Meyer, D.M. Hofmann, J.R. Niklas, and J.-M. Spaeth, Phys. Rev. B36, 1332 (1987); g) G.A. Baraff, Phys. Rev. Lett. 62, 2156, (1989)Google Scholar
4 Kaminska, M., Skowronski, M., Lagowski, J., Parsey, J.M., and Gatos, H. C., Appl. Phys. Lett. 43, 302 (1983)Google Scholar
5 Baj, M. and Dreszer, P., in Proceedings of the 15th International Conference on Defects in Semiconductors. Edited by G. Ferenczi (Material Science Forum, Vol. 38-41, 1988, page 101. Trans Tech Publications, Switzerland)Google Scholar
6 Dreszer, P. and Baj, M., Acta Physica Polonica, A73, 219, (1988)Google Scholar
7 Martin, G. M., Appl. Phys. Lett. 39, 747, (1981), P. Omling, L. Samuelson, and H. G. Grimmeiss, in Proc. 17 Intnl. Conf. on Phys. of Semiconductors, San Francisco, Calif, 1984, Edited by J. D. Chadi asnd W. A. Harrison, (Springer Verlag, New York and Heidelberg, 1985) p.751Google Scholar
8 Vincent, G. and Bois, D., Solid State Communications, 27, 431, (1978)Google Scholar