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Properties and Perspectives of Semiconducting Transition Metal silicides

Published online by Cambridge University Press:  15 February 2011

H. Lange
H. Lange*
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

The structural, electronic, optical, and electrical properties of semiconducting silicides with transition metals from the VIth to the Vlllth Group of the Periodic Table are reviewed. Main emphasis is put on ß-FeSi2. The review includes recent results on optical measurements from the infrared up to 24 eV. Typical similarities in the phonon and interband spectra are outlined. Gap energy determinations are critically discussed. Doping impurities are characterized by EPR. Electrical investigations revealed characteristic features of transport parameters depending on temperature and magnetic field. Possible fields of application are analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 307
Copyright
Copyright © Materials Research Society 1996

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