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Properties of Catalytic CVD SiNx For Antireflection Coatings

Published online by Cambridge University Press:  10 February 2011

A. Izumi  and
H. Matsumura
A. Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
H. Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
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Abstract

We propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x 1011 cm2eV-1, 3) the step coverage of the film is very conformal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 161
Copyright
Copyright © Materials Research Society 1999

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