Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-29T23:51:09.927Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Dielectric Thin Films Formed by Laser Evaporation

Published online by Cambridge University Press:  21 February 2011

H. Sankur
H. Sankur*
Affiliation:
Rockwell International Science Center1049 Camino Dos Rios, Thousand Oaks, CA 91360
Get access

Abstract

The technique of laser evaporation for the deposition of thin films has been applied to a large class of materials including oxides, fluorides and II-VI semiconductors. The evaporations were performed in high vacuum or under O2 pressures of 10−3 Torr, on several types of substrates, by using CO2 lasers in CW and pulse modes. The thin films thus obtained have been characterized for their structural, optical and electrical properties.

Entire ranges of mixtures in several binary systems (e.g., SnO2-SiO2), have been obtained by coevaporation, using mirrors to steer the laser beam among sources.

Conditions that affect the stoichiometry and structural properties (laser parameters, background pressure, evaporation rate, substrate temperature) have been established for each material system. Differences in the evaporation behavior of materials under CW and pulsed conditions have been investigated for the case of ZnO. Present and future applications of this technique in the optical devices field are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 373
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hass, G. and Ramsey, J.B., Appl. Optics, 8 (1115) 1969.Google Scholar
2. Cheung, J.T., Magee, T., J. Vac. Sci. Tech. A 1, 1604 (1983).Google Scholar
3. Sankur, H., Motamedi, E., IEEE Ultrasonic Symp. Atlanta, GA, Nov. 1983.Google Scholar
4. Bykovskii, Yu.A.. Sov. Phys. Tech. Phys. 23, 578 (1976).Google Scholar
5. Thermophysical Properties of Matter, Purdue, Univ.Google Scholar
6. Dimitrov, D., Metev, S., Gupov, I., Koshukarov, V., J. Mat. Sci. Lett. 1 334, (1982).CrossRefGoogle Scholar
7. Frichtenicht, J.F., Rev. Sci. Instr. 45, 51 (1974).Google Scholar
8. Hanabusa, M., Suzuki, M., Nishigaki, S., App. Phys. Lett. 38, 385 (1981).CrossRefGoogle Scholar
9. Prengel, A.T., Dehaven, J., Johnson, E.J., Davidowits, P., Journal of App. Phys. 48, 3551 (1977).CrossRefGoogle Scholar
10. Gaponov, S.V., Luskin, B.M., Nesterov, B.A., Salaschenko, N.N., Soy. Phys. Solid State 19, 1736 (1977).Google Scholar
11. Lynds, L., Woody, B.A., J. of Elec. Spectra and Rel. Phen. 29, 147 (1983).CrossRefGoogle Scholar
12. Schwartz, G.P., Bondybey, V.E., English, J.H., Gualtieri, G.J., Appl. Phys. Lett 42, 952 (1983).Google Scholar
13. Kerr, W., J. of Scientific Instruments 2, 1112 (1969).Google Scholar