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Properties of H, O and C in GaN

Published online by Cambridge University Press:  10 February 2011

S. J. Pearton ,
C. R. Abernathy ,
J. W. Lee ,
C. B. Vartuli ,
J. D. MacKenzie ,
F. Ren ,
R. G. Wilson ,
J. M. Zavada ,
R. J. Shul  and
J. C. Zolper
S. J. Pearton
Affiliation:
University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville FL 32611
J. W. Lee
Affiliation:
University of Florida, Gainesville FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Gainesville FL 32611
J. D. MacKenzie
Affiliation:
University of Florida, Gainesville FL 32611
F. Ren
Affiliation:
AT&T Bell Laboratories, Malibu Hill NJ 07974
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu CA 90265
J. M. Zavada
Affiliation:
US Army Research Laboratory, RTP NC 27709
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
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Abstract

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at ≥450°C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until >800°C, and its diffusivity is relatively high (˜10−11cm2/s) even at low temperatures (<200°C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30 - 40 meV. It is essentially immobile up to 1100°C. Carbon can produce low p-type levels (3×1017cm−3) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 347
Copyright
Copyright © Materials Research Society 1996

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