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Properties of Thin Films After Focused Beam Processing

Published online by Cambridge University Press:  28 February 2011

I.H. Campbell  and
P.M. Fauchet
I.H. Campbell
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544 Fran Adar, Instruments S.A., Metuchen, NJ 08840
P.M. Fauchet
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544 Fran Adar, Instruments S.A., Metuchen, NJ 08840
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Abstract

A Raman microprobe is used to detect the changes in crystallinity, stress and homogeneity on thin films of SOI irradiated by a single laser pulse. Maximum, isotropic, planar tensile stress increased from 5x109 dyn/cm2 to 12x109 dyn/cm2 in the processed area and stress of 8x109 dyn/cm2 was observed 20 μm beyond the damaged region. Crystallite sizes of 50 Å to greater than 300 Å were observed inside the processed area. Results obtained with different pulsed laser frequencies are compared and significant differences in the processing effects are observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 311
Copyright
Copyright © Materials Research Society 1986

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References

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