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A Proposal of a Parallel Resistance Model for the Conduction Mechanism of Binary Transition Metal Oxide ReRAM

Published online by Cambridge University Press:  01 February 2011

Kentaro Kinoshita ,
Hideyuki Noshiro ,
Chikako Yoshida ,
Yoshihiro Sato ,
Masaki Aoki  and
Yoshihiro Sugiyama
Kentaro Kinoshita
Affiliation:
kinoshita.kenta@jp.fujitsu.com, Fujitsu Laboratories Ltd., Embedded Memories Development Dept., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan, +81-46-250-8379, +81-46-250-8378
Hideyuki Noshiro
Affiliation:
noshiro@ji.fujitsu.com, Fujitsu Laboratories Ltd., Embedded Memories Development Dept., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan
Chikako Yoshida
Affiliation:
cyoshida@labs.fujitsu.com, Fujitsu Laboratories Ltd., Embedded Memories Development Dept., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan
Yoshihiro Sato
Affiliation:
sato_yoshihiro@jp.fujitsu.com, Fujitsu Laboratories Ltd., Embedded Memories Development Dept., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan
Masaki Aoki
Affiliation:
aoki.masaki@jp.fujitsu.com, Fujitsu Laboratories Ltd., Embedded Memories Development Dept., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan
Yoshihiro Sugiyama
Affiliation:
sugiyama.y@jp.fujitsu.com, Fujitsu Laboratories Ltd., Embedded Memories Development Dept., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan
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Abstract

A parallel resistance model (PRM), in which the total resistance, Rtotal, is given by a parallel connection of resistance of a filament, Rfila, and that of a film excluding a filament, Rexcl, was proposed to understand DC electric properties of resistive RAM (ReRAM). Here, the relationship of 1/Rtotal = 1/Rfila + 1/Rexcl is satisfied. To prove the validity of this model, the dependence of the relationship between resistance and temperature, R(T), of Pt/NiO/Pt on an area of a top electrode, S, was investigated. It was clarified that R(T) depended on S, which is the result definitely expected by the PRM. It was also clarified that smaller S is crucial to observe intrinsic properties of a filament of ReRAM.

Keywords

memoryoxideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-09
Copyright
Copyright © Materials Research Society 2007

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References

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