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Proton NMR Hole-Burning in Hot Wire a-Si:H

Published online by Cambridge University Press:  01 February 2011

J. Herberg ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg  and
R. E. I. Schropp
J. Herberg
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130, USA
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130, USA
D. J. Leopold
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130, USA
R. E. Norberg
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130, USA
R. E. I. Schropp
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands
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Abstract

Proton NMR near 200 MHz has been used to examine the dynamics of hole-burning in HWCVD a-Si:H films deposited from SiH4. Radiofrequency hole-burning is a tool to distinguish inhomogeneous broadening from homogeneous broadening. The 3 kHz FWHM resonance line from T-site-trapped H2 molecules shows a hole-burn behavior similar to that found for PECVD a-Si:H films, as does the 24 kHz FWHM line from clustered silicon-bonded hydrogens. However the ∼80 kHz FWHM superbroad line varies with tip angle uniformly across the line for hole-burns applied at any location within ∼50 kHz from the resonance center. The superbroad line is homogeneously broadened and apparently arises from superclose SiH clusters with inter-proton distances considerably less than 2 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A23.1
Copyright
Copyright © Materials Research Society 2002

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References

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