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Pulsed Laser Deposition of Epitaxial SrVO3 Films on (100)LaAlO3 and (100)Si

Published online by Cambridge University Press:  10 February 2011

P.W. Yip  and
K.H. Wong
P.W. Yip
Affiliation:
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
K.H. Wong
Affiliation:
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
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Abstract

Thin films of SrVO3 have been grown on (100)LaAlO3 and TiN buffered (100)Si substrates by pulsed laser deposition. The films were deposited in temperature range of 450°C – 750°C and under ambient oxygen pressure between 101−6 and 101−2 Torr. Their structural properties were characterized using a four-circle x-ray diffractometer. High quality SrVO3 films were obtained at growth temperatures above 500°C without post annealing. Heteroepitaxial relationship of < 100 >SrVo3 ∥ < 100 >LaAOl3 and <100>SrVo3∥ < 100 >TiN ∥ < 100 >Si were observed for films deposited at ≤ 550°C. X-ray photoelectron spectroscopic studies of the films suggest that the vanadium is mainly tetravalent and pentavalent. Charge transport measurements show that the films vary from semiconducting to highly conducting for different growth conditions. Resistivity of a few micro-ohm cm was recorded for some of the epitaxial SrVO3 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 347
Copyright
Copyright © Materials Research Society 2000

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References

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