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Pulsed Laser Deposition of Si Nanocluster Films

Published online by Cambridge University Press:  15 February 2011

W. Marine ,
I. Movtchan ,
A. Simakine ,
L. Patrone ,
R. Dreyfus ,
M. Sentis ,
M. Autric  and
N. Merk
W. Marine
Affiliation:
Laboratoire Interdisciplinaire Ablation Laser et Applications, URA CNRS 783
I. Movtchan
Affiliation:
Laboratoire Interdisciplinaire Ablation Laser et Applications, URA CNRS 783
A. Simakine
Affiliation:
Laboratoire Interdisciplinaire Ablation Laser et Applications, URA CNRS 783
L. Patrone
Affiliation:
Laboratoire Interdisciplinaire Ablation Laser et Applications, URA CNRS 783
R. Dreyfus
Affiliation:
Laboratoire Interdisciplinaire Ablation Laser et Applications, URA CNRS 783
M. Sentis
Affiliation:
UM CNRS 138
M. Autric
Affiliation:
UM CNRS 138
N. Merk
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (Suisse), Faculté des Sciences de Luminy, Université de la Méditerranée, Case 901, 13288 Marseille Cedex 9, France
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Abstract

Reactive laser ablation of Si targets by ArF* excimer laser (wavelength 193 nm, pulse width 15 ns (FWHM)) was performed in He, Ar or O2 0.05-1 Torr atmospheres and led to Si-SiOx nanocluster thin film formation within laser-induced plasma plume. Optical spectroscopy and optical Time-of-Flight (TOF) measurements were carried out during ablation-deposition experiments. A number of large weak emission bands in blue and green-yellow spectral branches were observed both in inert gases and in oxygen ambient atmospheres and attributed to the emission from excited nanoparticles in the plasma plume. TOF measurements proved a different spatio-temporal evolution of this emission compare to the emission of monoatomic particles. The films exhibit photoluminescence bands in the UV region (around 290 nm and between 310-370 nm), in the blue (between 420 and 500 nm), and in the green-yellow (at 520-560 nm). The relative intensities of the luminescence bands depend on the average cluster size, which is determined by preparation conditions (nature and pressure of the ambient gas, laser fluence).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 365
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Canham, T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
2 Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y. and Masumoto, Y., Appl. Phys. Lett., 59, 3168 (1991).Google Scholar
3 Brus, L., J. Phys. Chem., 98, 3575 (1994).Google Scholar
4 Nishikawa, H., Shiroyama, T., Nakamura, R., Ohki, Y., Nagasawa, K. and Hama, Y., Phys. Rev. B, 45, 586 (1992).Google Scholar
5 Heath, J.R., Liu, Yuan, O'Brien, S.C., Zhang, Qing-Ling, Curl, R.F., Tittel, F.K. and Smalley, R.E., J. Chem. Phys., 83, 5520 (1985).Google Scholar
6 Laaksonen, R.T., Goetsch, D.A., Owens, D.W., Poirier, D.M., Stepniak, F. and Weaver, J.H., Rev. Sci. Instrum., 65, 2267 (1994).Google Scholar
7 Chiu, L.A., Seraphin, A.A. and Kolenbrander, K.D., Journal of Electronic Materials, 23, 347 (1994).Google Scholar
8 Gavartin, J.L., Matthai, C.C. and Morrison, I., Thin Solid Films, 255, 39 (1995).Google Scholar
9 Movtchan, I.A., Marine, W., Dreyfus, R.W., Le, H.C., Sentís, M. and Autric, M., Proceedings of the Third Conference on the Laser Ablation and Applications, COLA 95, Appl. Surf. Sciences, to be published.Google Scholar
10 Pears, R.W. and Gaydon, A.G., The Identification of Molecular Spectra, Chapman and Hall Ltd., Cambridge, 1976.Google Scholar
11 Movtchan, I.A., Dreyfus, R.W., Marine, W., Sentís, M., Autric, M., Le Lay, G. and Merk, N., Thin Solid Films, 255, 286 (1995).Google Scholar
12 Rinnen, K.D. and Mandich, M.L., Phys. Rev. Lett., 69, 1823 (1992).Google Scholar
13 Marine, W., Tokarev, V., Gerri, M., Sentís, M. and Fogarassy, E., Thin Solid Filmsv 241, 103 (1994).Google Scholar
14 Zettlemayer, A.C., Nucleation Phenomena, Wiley, N.Y. 1977.Google Scholar
15 Geohegan, D.B., Ch. 5 in Pulsed Laser Deposition of Thin Films, Chrisey, D.B. and Hubler, G.K. (eds), Wiley, N.Y. 1994.Google Scholar
16 See for example : Le, H.C., Zeitoun, D., Burtschell, Y., Marine, W., Sentís, M. and Dreyfus, R.W., 2D Modeling of Laser induced Plasma Expansion, this proceeding.Google Scholar