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Pulsed Laser Deposition of Thin Silicon Nitride Films

Published online by Cambridge University Press:  01 January 1992

Xiangqun Xu ,
Kanekazu Seki ,
Naiqun Chen ,
Hideo Okabe ,
Joan M. Frye  and
Joshua B. Halpern
Xiangqun Xu
Affiliation:
Materials Science Research Center of Excellence and Department of Chemistry, Howard University, Washington, DC 20059
Kanekazu Seki
Affiliation:
Materials Science Research Center of Excellence and Department of Chemistry, Howard University, Washington, DC 20059
Naiqun Chen
Affiliation:
Materials Science Research Center of Excellence and Department of Chemistry, Howard University, Washington, DC 20059
Hideo Okabe
Affiliation:
Materials Science Research Center of Excellence and Department of Chemistry, Howard University, Washington, DC 20059
Joan M. Frye
Affiliation:
Materials Science Research Center of Excellence and Department of Chemistry, Howard University, Washington, DC 20059
Joshua B. Halpern
Affiliation:
Materials Science Research Center of Excellence and Department of Chemistry, Howard University, Washington, DC 20059
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Abstract

ABSTRACTPulsed laser deposition of compressed Si3N4 powder has been used to grow thin SiNx films on a variety of substrates at substrate temperatures ranging from room temperature to 350°C. Film composition was analyzed by Auger electron spectroscopy. The SiN0.33 films have a band gap of 5.60 eV as measured by UV absorption. The FT-IR spectrum shows an absorption characteristic of Si-N. The Si/N ratio in the deposited films corresponding to various substrate temperatures has also been determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 331
Copyright
Copyright © Materials Research Society 1993

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References

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